Erbium/ytterbium-activated silica-titania planar and channel waveguides prepared by rf-sputtering.

被引：2

作者：

Chiasera, A ^{[1
]}

Montagna, M ^{[1
]}

Tosello, C ^{[1
]}

Gonçalves, RR ^{[1
]}

Chiappini, A ^{[1
]}

Ferrari, M ^{[1
]}

Zampedri, L ^{[1
]}

Pelli, S ^{[1
]}

Righini, GC ^{[1
]}

Monteil, A ^{[1
]}

Foglietti, M ^{[1
]}

Minotti, A ^{[1
]}

Almeida, RM ^{[1
]}

Marques, A ^{[1
]}

Soares, V ^{[1
]}

机构：

[1] Univ Trent, Dip Fis & INFM, I-38050 Trent, Italy

来源：

RARE-EARTH-DOPED MATERIALS AND DEVICES VII | 2003年 / 4990卷

关键词：

rf sputtering; waveguides; erbium; ytterbium; silica-titania; optical properties; luminescence;

D O I：

10.1117/12.474774

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiO2 - TO2: Er3+ - Yb3+ waveguides were prepared by rf-sputtering technique. The active films were deposited on silica-on-silicon and v-SiO2 substrates. The parameters of preparation were chosen in order to optimize the waveguides for operation in the NIR region with particular attention to the minimization of losses. The thickness of the waveguides and the refractive index at 632.8 and 543.5 nm were measured by an in-line apparatus. The losses, for the TE0 mode, were evaluated at 632.8 and 1300 nm. Roughness measurements were carried out by means of a stylus profilometer. The structural properties were investigated with several techniques such as Energy Dispersive Spectroscopy and Raman Spectroscopy. All waveguides were single-mode at 1550 nm. An attenuation coefficient equal or lower than 0:2 dB/cm was measured both at 632.8 nm and 1300, nm: The emission of I-4(13/2) --> I-4(15/2) of Er3+ ion transition with a 40 nm bandwidth was observed upon excitation in the TE0 mode at 981 and 514.5 nm. Back energy transfer from Er3+ to Yb3+ was demonstrated-by measurement of Yb3+ emission upon Er3+ excitation at 514.5 rum. Photoluminescence excitation spectroscopy was used to obtain information about the effective excitation efficiency of Er3+ ions by co-doping with Yb3+ ions. Channel waveguides in rib configuration were obtained by etching the active film by a wet etching process. Scanning Electron Microscopy was used to analyze the morphology of the waveguides.

引用

页码：38 / 46

页数：9

共 21 条

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