Solid-State Reactions of SiC/W-25Re Alloy and Thermal Stability of SiC/Ti/W-25Re Alloy under High-Temperature Annealing

被引：1

作者：

Han, Jun Sae ^{[2
]}

Jang, Seung Sik ^{[1
]}

Park, Dong Yong ^{[3
]}

Oh, Yong Jun ^{[1
]}

Park, Seong Jin ^{[2
]}

机构：

[1] Hanbat Natl Univ, Dept Adv Mat Sci & Engn, Daejeon 305719, South Korea

[2] Pohang Univ Sci & Engn POSTECH, Dept Mech Engn, Pohang 790784, South Korea

[3] KIER, Solar Thermal Lab, Daejeon 305343, South Korea

来源：

ADVANCED ENGINEERING MATERIALS | 2016年 / 18卷 / 09期

关键词：

TUNGSTEN-RHENIUM ALLOYS; SIC FILMS; SILICON-CARBIDE; CARBON; DIFFUSION; METAL; NI; MO;

D O I：

10.1002/adem.201500660

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solid-state reactions of SiC/W-25Re alloy and SiC/Ti/W-25Re alloy are investigated under the high-temperature annealing at 1500 degrees C. The interface reaction layer between SiC and W-25Re alloy is composed of WC-WSi2-W5Si3-W-Re sigma phase-dendrite microstructure. Solid-state reactions between W and SiC form two types of W-silicides and the relative depletion of W brings formation of the W-Re sigma phase. In order to prevent direct interfacial reactions, Ti layer is intercalated as a secondary buffer layer. Compared to the original interface, thicknesses of both reaction layer and dendrite layer are significantly decreased. Although the thermal reaction of Ti and W brings inhomogeneous characteristics, the proposed functionally graded structure is expected to enhance the thermal stability.

引用

页码：1574 / 1580

页数：7

共 29 条

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