Solid-State Reactions of SiC/W-25Re Alloy and Thermal Stability of SiC/Ti/W-25Re Alloy under High-Temperature Annealing

被引:1
|
作者
Han, Jun Sae [2 ]
Jang, Seung Sik [1 ]
Park, Dong Yong [3 ]
Oh, Yong Jun [1 ]
Park, Seong Jin [2 ]
机构
[1] Hanbat Natl Univ, Dept Adv Mat Sci & Engn, Daejeon 305719, South Korea
[2] Pohang Univ Sci & Engn POSTECH, Dept Mech Engn, Pohang 790784, South Korea
[3] KIER, Solar Thermal Lab, Daejeon 305343, South Korea
关键词
TUNGSTEN-RHENIUM ALLOYS; SIC FILMS; SILICON-CARBIDE; CARBON; DIFFUSION; METAL; NI; MO;
D O I
10.1002/adem.201500660
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solid-state reactions of SiC/W-25Re alloy and SiC/Ti/W-25Re alloy are investigated under the high-temperature annealing at 1500 degrees C. The interface reaction layer between SiC and W-25Re alloy is composed of WC-WSi2-W5Si3-W-Re sigma phase-dendrite microstructure. Solid-state reactions between W and SiC form two types of W-silicides and the relative depletion of W brings formation of the W-Re sigma phase. In order to prevent direct interfacial reactions, Ti layer is intercalated as a secondary buffer layer. Compared to the original interface, thicknesses of both reaction layer and dendrite layer are significantly decreased. Although the thermal reaction of Ti and W brings inhomogeneous characteristics, the proposed functionally graded structure is expected to enhance the thermal stability.
引用
收藏
页码:1574 / 1580
页数:7
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