20-25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS

被引:2
|
作者
Szilagyi, Laszlo [1 ]
Belfiore, Guido [1 ]
Henker, Ronny [1 ]
Ellinger, Frank [1 ]
机构
[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, D-01069 Dresden, Germany
关键词
RF front-ends; Active circuits; Broadband amplifiers; GB/S TRANSCEIVER;
D O I
10.1017/S1759078717000472
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design of an analog frontend including a receiver amplifier (RX) and laser diode driver (LDD) for optical communication system is described. The RX consists of a transimpedance amplifier, a limiting amplifier, and an output buffer (BUF). An offset compensation and common-mode control circuit is designed using switched-capacitor technique to save chip area, provides continuous reduction of the offset in the RX. Active-peaking methods are used to enhance the bandwidth and gain. The very low gate-oxide breakdown voltage of transistors in deep sub-micron technologies is overcome in the LDD by implementing a topology which has the amplifier placed in a floating well. It comprises a level shifter, a pre-amplifier, and the driver stage. The single-chip frontend, fabricated in a 28 nm bulk-digital complementary metal-oxide-semiconductor (CMOS) process has a total active area of 0.003 mm(2), is among the smallest optical frontends. Without the BUF, which consumes 8 mW from a separate supply, the RX power consumption is 21 mW, while the LDD consumes 32 mW. Small-signal gain and bandwidth are measured. A photo diode and laser diode are bonded to the chip on a test-printed circuit board. Electro-optical measurements show an error-free detection with a bit error rate of 10(-12) at 20 Gbit/s of the RX at and a 25 Gbit/s transmission of the LDD.
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页码:1667 / 1677
页数:11
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