Magnetoresistance in magnetic tunnel junctions with nonmagnetic metallic spacers and cap layers

被引：1
|
作者：
Zhang, WS
Li, BZ
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 1999年 / 16卷 / 01期
关键词：
D O I：
10.1088/0256-307X/16/1/022
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In a free-electron approximation, transport properties of magnetic tunnel junctions with nonmagnetic metallic spacers and cap layers were studied. The magnetoresistance is oscillatory functions of the thicknesses of nonmagnetic metallic spacers and ferromagnets, their period is determined by the Fermi surface properties of the metals, and magnetoresistances (up to about 10(3) %) much greater than those predicted by the Julliere's model are obtained. The results indicate that this structure has potential in designing spin-polarized tunneling devices.
引用
收藏
页码：62 / 64
页数：3
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