Morphology and bond strength of copper wafer bonding

被引：136

作者：

Chen, KN ^{[1
]}

Tan, CS ^{[1
]}

Fan, A ^{[1
]}

Reif, R ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 01期

关键词：

D O I：

10.1149/1.1626994

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The morphology and bond strength of copper-bonded wafer pairs prepared under different bonding/annealing temperatures and durations are presented. The interfacial morphology was examined by transmission electron microscopy while the bond strength was examined from a diesaw test. Physical mechanisms explaining the different roles of postbonding anneals at temperatures above and below 300degreesC are discussed. A map summarizing these results provides a useful reference on process conditions suitable for actual microelectronics fabrication and three-dimensional integrated circuits based on Cu wafer bonding. (C) 2003 The Electrochemical Society.

引用

页码：G14 / G16

页数：3

共 6 条

[1] 3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration [J].