Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits

被引：155
作者：
Kang, Dong Han [1 ,2 ]
Kang, In [1 ,2 ]
Ryu, Sang Hyun [1 ,2 ]
Jang, Jin [1 ,2 ]
机构：
[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 10期
关键词：
Amorphous indium-gallium-zinc-oxide (a-IGZO); coplanar; ring oscillator (RO); self-aligned process; thin-film transistor (TFT); THIN-FILM TRANSISTORS; GA-ZN-O; RESISTANCE;
D O I：
10.1109/LED.2011.2161568
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a self-aligned coplanar amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) using an a-IGZO/SiO2 stack layer. From the channel-length dependence of the total resistance for the TFTs, the channel and parasitic resistances were found to be 8.4 k Omega/mu m and 9.7 k Omega/sq, respectively. The fabricated a-IGZO TFT exhibits field-effect mobility of 23.3 cm(2)/V . s, threshold voltage of 3.6 V, and gate voltage swing of 203 mV/dec. A 23-stage ring oscillatormade of the self-aligned TFTs exhibits a propagation delay time of 17 ns/stage at a supply voltage of 22 V.
引用
收藏
页码：1385 / 1387
页数：3
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