Nitridation of substrates with hydrazine cyanurate for the growth of gallium nitride

被引：0
|
作者：
Kropewnicki, TJ [1 ]
Kohl, PA [1 ]
机构：
[1] Georgia Inst Technol, Sch Chem Engn, Atlanta, GA 30332 USA
来源：
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷
关键词：
D O I：
10.1557/PROC-512-227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of purified hydrazine cyanurate as a solid source of hydrazine in the low temperature nitridation of GaAs (100) and (111) and sapphire (0001) is demonstrated. The nitridated surfaces were analyzed by X-ray Photoelectron Spectroscopy (XPS) for chemical composition and Atomic Force Microscopy for surface morphology. The GaAs surfaces were composed primarily of GaN, GaAs, and Ga2O3, and were as smooth as unprocessed standards. The nitridated sapphire surfaces were composed of AlNxO1-x and exhibited three-dimensional growth for long nitridation times.
引用
收藏
页码：227 / 232
页数：6
相关论文
共 50 条
  • [21] Gallium nitride thick layers: Epitaxial growth and separation from substrates
    Belkov, VV
    Botnaryuk, VM
    Fedorov, LM
    Diakonu, II
    Krivolapchyuk, VV
    Scheglov, MP
    Zhilyaev, YV
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 191 - 193
  • [22] Homogeneous Dispersion of Gallium Nitride Nanoparticles in a Boron Nitride Matrix by Nitridation with Urea
    Kusunose, Takafumi
    Sekino, Tohru
    Ando, Yoichi
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (07) : 4312 - 4316
  • [23] Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
    Ghazali, Norizzawati Mohd
    Yasui, Kanji
    Hashim, Abdul Manaf
    NANOSCALE RESEARCH LETTERS, 2014, 9
  • [24] Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
    Norizzawati Mohd Ghazali
    Kanji Yasui
    Abdul Manaf Hashim
    Nanoscale Research Letters, 9
  • [25] Nitridation of Bulk Monocrystalline and Powdered Microcrystalline Gallium Arsenide Towards Cubic Gallium Nitride Nanopowders
    Drygas, Mariusz
    Bucko, Miroslaw M.
    Janik, Jerzy F.
    CURRENT NANOSCIENCE, 2013, 9 (02) : 173 - 182
  • [26] Gallium nitride optoelectronic substrates for biological sensing
    Muth, JF
    2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 292 - 293
  • [27] Gallium nitride based LEDs on silicon substrates
    Bojarczuk, NA
    Guha, S
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS III, 1999, 3621 : 37 - 42
  • [28] The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant
    Seredin, P. V.
    Goloshchapov, D. L.
    Kosheleva, O. K.
    Buylov, N. S.
    Peshkov, Y. A.
    Barkov, K. A.
    Kersnovsky, E. S.
    Mizerov, A. M.
    Timoshnev, S. N.
    Sobolev, M. S.
    Serikov, D. V.
    Chukavin, A. I.
    Nevedomskiy, V. N.
    Kukushkin, S. A.
    APPLIED SURFACE SCIENCE, 2025, 689
  • [29] Epitaxial growth of gallium nitride
    Davis, R. F.
    Bishop, S. M.
    Mita, S.
    Collazo, R.
    Reitmeier, Z. J.
    Sitar, Z.
    PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS, 2007, 916 : 520 - +
  • [30] Growth of gallium nitride by HVPE
    Cadoret, R
    Trassoudaine, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (32) : 6893 - 6905
12345