Probing electrical properties of a silicon nanocrystal thin film using x-ray photoelectron spectroscopy

被引：1
|
作者：
Laudari, Amrit [1 ]
Pathiranage, Sameera [1 ]
Thomas, Salim A. [2 ]
Petersen, Reed J. [3 ]
Anderson, Kenneth J. [2 ]
Pringle, Todd A. [2 ]
Hobbie, Erik K. [2 ]
Oncel, Nuri [1 ]
机构：
[1] Univ North Dakota, Dept Phys & Astrophys, Grand Forks, ND 58202 USA
[2] North Dakota State Univ, Mat & Nanotechnol Program, Fargo, ND 58202 USA
[3] North Dakota State Univ, Dept Phys, Fargo, ND USA
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2022年 / 93卷 / 08期
关键词：
DIELECTRIC-CONSTANT; PHOTOLUMINESCENCE; SIZE;
D O I：
10.1063/5.0090166
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We performed x-ray photoelectron spectroscopy measurements on a thin film of Si nanocrystals (SiNCs) while applying DC or AC external biases to extract the resistance and the capacitance of the thin film. The measurement consists of the application of 10 V DC or square wave pulses of 10 V amplitude to the sample at various frequencies ranging from 0.01 to 1 MHz while recording x-ray photoemission data. To analyze the data, we propose three different models with varying degrees of accuracy. The calculated capacitance of SiNCs agrees with the experimental value in the literature. Published under an exclusive license by AIP Publishing.
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页数：6
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