Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method

被引：15

作者：

Rudzinski, M. ^{[1
]}

Kudrawiec, R. ^{[2
]}

Janicki, L. ^{[2
]}

Serafinczuk, J. ^{[3
]}

Kucharski, R. ^{[4
]}

Zajac, M. ^{[4
]}

Misiewicz, J. ^{[2
]}

Doradzinski, R. ^{[4
]}

Dwilinski, R. ^{[4
]}

Strupinski, W. ^{[1
]}

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[3] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

[4] AMMONO Sp Zoo, PL-00377 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 328卷 / 01期

关键词：

MOCVD; GaN; X-ray diffraction; Optical properties; LIGHT-EMITTING-DIODES; MISCUT;

D O I：

10.1016/j.jcrysgro.2011.06.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN epilayers were grown by metalorganic chemical vapor deposition (MOCVD) on c-, m-, a-, and (20.1)-plane GaN substrates obtained by the ammonothermal method. The influence of (i) the surface preparation of substrates, (ii) MOCVD growth parameters, and (iii) the crystallographic orientation of substrates on the structural and optical properties of GaN epilayers was investigated and carefully analyzed. It was observed that the polishing of substrates and their misorientation have strong impact on the quality of GaN epilayers grown on these substrates. The MOCVD growth process was optimized for epilayers grown on m-plane GaN substrates. The best structural and optical properties were achieved for epilayers deposited at 1075 degrees C and the total reactor pressure of 50 mbar. These conditions were applied to grow GaN epilayers on substrates with other (c-, a-, and (20.1)-plane) crystallographic orientations in the same MOCVD process. Particularly good optical properties were obtained for GaN epilayers deposited on polar and non-polar (m- and a-plane) substrates, whereas slightly worse optical properties were observed for epilayers deposited on the semi-polar substrate. It therefore means that MOCVD growth conditions optimized for a given crystallographic direction (m-plane direction in this case) work rather well also for other crystallographic directions. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5 / 12

页数：8

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