Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth

被引：23

作者：

Ackert, Jason J. ^{[1
]}

Fiorentino, Marco ^{[2
]}

Logan, Dylan F. ^{[1
]}

Beausoleil, Raymond G. ^{[2
]}

Jessop, Paul E. ^{[3
]}

Knights, Andrew P. ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L8, Canada

[2] Hewlett Packard Labs, Palo Alto, CA USA

[3] Wilfrid Laurier Univ, Dept Phys, Waterloo, ON N2L 3C5, Canada

来源：

JOURNAL OF NANOPHOTONICS | 2011年 / 5卷

关键词：

integrated optics; optical interconnects; silicon; photodetectors; PHOTODIODE;

D O I：

10.1117/1.3666059

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have devised and fabricated high-speed silicon-on-insulator resonant microring photodiodes. The detectors comprise a p-i-n junction across a silicon rib waveguide microring resonator. Light absorption at 1550 nm is enhanced by implanting the diode intrinsic region with boron ions at 350 keV with a dosage of 1 x 10(13) cm(-2). We have measured 3-dB bandwidths of 2.4 and 3.5 GHz at 5 and 15 V reverse bias, respectively, and observed an open-eye diagram at 5 gigabit/s with 5 V bias. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3666059]

引用

页数：6

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