Electronic Raman response in electron-doped cuprate superconductors

被引：5

作者：

Geng, Zhihao ^{[1
]}

Feng, Shiping ^{[1
]}

机构：

[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China

来源：

PHYSICS LETTERS A | 2011年 / 375卷 / 37期

基金：

中国国家自然科学基金;

关键词：

Electronic Raman response; Electron-doped cuprate superconductor; Nonmonotonic d-wave gap; Kinetic energy driven superconducting mechanism; DOPING DEPENDENCE; SCATTERING; STATE; BI2SR2CACU2O8+X; SPECTROSCOPY; WAVE;

D O I：

10.1016/j.physleta.2011.07.035

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic Raman response in the electron-doped cuprate superconductors is studied based on the t-t'-J model. It is shown that although the domelike shape of the doping dependent peak energy in the B-2g symmetry is a common feature for both electron-doped and hole-doped cuprate superconductors, there are pronounced deviations from a cubic response in the B-1g channel and a linear response in the B-2g channel for the electron-doped case in the low energies. It is also shown that these pronounced deviations are mainly caused by a nonmonotonic d-wave gap in the electron-doped cuprate superconductors. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3329 / 3334

页数：6

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