Metallophthalocyanines - Gas sensors, resistors and field effect transistors

被引:440
作者
Guillaud, G
Simon, J
Germain, JP
机构
[1] Ecole Super Phys & Chim Ind Ville Paris, CNRS, F-75231 Paris 05, France
[2] Univ Lyon 1, F-69622 Villeurbanne, France
[3] Univ Clermont Ferrand, F-63177 Aubiere, France
关键词
field effect transistor; gas sensors; phthalocyanines; resistors;
D O I
10.1016/S0010-8545(98)00177-5
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The conventional metallophthalocyanines (PcM, M=Cu, Zn, Ni ...) are insulators when undoped. However, they possess accessible pi and pi* orbitals which make at least partial oxidization or reduction of the macrocycle possible with gases such as NO2 or O-3. This yields more or less conductive molecular materials. Their resistance is, therefore, a measurement of the concentration of the oxidizing or reducing species present in the surrounding atmosphere (resistors). In the case of rare earth bisphthalocyanines (in particular the lutetium derivative), the intrinsic density of charge carriers is no longer negligible and the corresponding thin films or crystals are semiconductors. Gases such as NO2, at moderate concentrations and temperatures, can afford completely oxidized materials: the doping process which increases the conductivity is therefore followed by an increase in the resistance. The same type of studies have been carried out using metallophthalocyanine as the electroactive (semiconductive) part of a field effect transistor (FET). After a schematic description of the chemical phenomena arising in molecular FET, a detailed chronology of their discovery is given. The influence of gases on FET characteristics is then reported. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:1433 / 1484
页数:52
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