Tuning the photoluminescence, conduction mechanism and scattering mechanism of ZnSnN2

被引：15

作者：

Cai, Xing-Min ^{[1
,2
]}

Wang, Bo ^{[1
,2
]}

Ye, Fan ^{[1
,2
]}

Vaithinathan, Karthikeyan ^{[3
]}

Zeng, Jun-Jie ^{[1
,2
]}

Zhang, Dong-Ping ^{[1
,2
]}

Fan, Ping ^{[1
,2
]}

Roy, V. A. L. ^{[3
]}

机构：

[1] Shenzhen Univ, Sch Phys & Energy, Shenzhen 518060, Peoples R China

[2] Shenzhen Univ, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China

[3] City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 779卷

关键词：

ZnSnN2; Impurity band conduction; Conduction band conduction; Photoluminescence; Ionized impurity scattering; TRANSPORT-PROPERTIES; SHALLOW DONORS; TEMPERATURE; FILMS;

D O I：

10.1016/j.jallcom.2018.11.239

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The high electron concentration and low mobility of ZnSnN2 hinder its potential applications in photocatalytic and optoelectronic devices. To reveal the mechanism, herein, ZnSnN2 thin films were prepared under different sputtering pressure. The results show that impurity band conduction, an electron density of above 10(20) cm(-3) and a mobility of 2 cm(2)V(-1)s(-1) dominated by variable-range hopping are observed in samples prepared at lower sputtering pressure, due to the unintentional incorporation of substitutional oxygen which is from residual vapour and which substitutes nitrogen, while conduction band conduction, an electron density of 10(19) cm(-3) , a mobility of 24 cm(2)V(-1)s(-1) limited by ionized impurity scattering and self-compensation ratio as well as an interband direct recombination emission are found in samples prepared at higher sputtering pressure, due to the decrease in substitutional oxygen doping. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：237 / 243

页数：7

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