High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

被引：10

作者：

Chao, Yu-Chiang ^{[3
]}

Chung, Chin-Ho ^{[3
]}

Zan, Hsiao-Wen ^{[1
,2
]}

Meng, Hsin-Fei ^{[3
]}

Ku, Ming-Che ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 23期

关键词：

THIN-FILM TRANSISTORS; MOBILITY; ARRAYS;

D O I：

10.1063/1.3668086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 x 10(4), and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated. (C) 2011 American Institute of Physics. [doi:10.1063/1.3668086]

引用

页数：4

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