Effect of annealing on thermal stability and morphology of pulsed laser deposited Ir thin films

被引：8

作者：

Gong, Yansheng ^{[1
,2
]}

Wang, Chuanbin ^{[2
]}

Shen, Qiang ^{[2
]}

Zhang, Lianmeng ^{[2
]}

机构：

[1] China Univ Geosci, Sch Mat Sci & Chem Engn, Wuhan 430074, Peoples R China

[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 13期

关键词：

iridium thin films; annealing; stability; morphology; pulsed laser deposition;

D O I：

10.1016/j.apsusc.2007.12.012

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Iridium (Ir) thin films, deposited on Si (1 0 0) substrate by pulsed laser deposition (PLD) technique using Ir target in a vacuum atmosphere, were annealed in air ambient and the thermal stability was investigated. The crystal structure and surface morphology of Ir thin films before and after being annealed were studied by X-ray diffraction, Raman scattering, scanning electron microscope, and atomic force microscopy. The results showed that single-phase Ir thin films with (1 1 1) preferred orientation could be deposited on Si (1 0 0) substrate at 300 degrees C and it remained stable below 600 degrees C, which showed a promising bottom electrode of integrated ferroelectric capacitors. Ir thin films got oxidized to IrO2 at temperatures from 650 to 800 degrees C. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：3921 / 3924

页数：4

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