Layer-by-Layer Assembled Polyaniline Nanofiber/Multiwall Carbon Nanotube Thin Film Electrodes for High-Power and High-Energy Storage Applications

被引:237
|
作者
Hyder, Md Nasim [2 ]
Lee, Seung Woo [2 ,4 ]
Cebeci, Fevzi C. [2 ]
Schmidt, Daniel J. [2 ]
Shao-Horn, Yang [1 ,3 ,4 ]
Hammond, Paula T. [2 ]
机构
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Chem Engn, Cambridge, MA 02139 USA
[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[4] MIT, Electrochem Energy Lab, Cambridge, MA 02139 USA
基金
美国国家科学基金会; 加拿大自然科学与工程研究理事会;
关键词
polyaniline; carbon nanotubes; layer-by-layer assembly; nanostructured electrodes; lithium-ion batteries; electrochemical capacitors; MULTILAYER FILMS; POLYMER; NANOSTRUCTURES; COMPOSITES; TEMPLATE;
D O I
10.1021/nn2029617
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Thin film electrodes of polyaniline (PANi) nanofibers and functionalized multiwall carbon nanotubes (MWNTs) are created by layer-by-layer (LbL) assembly for microbatteries or - electrochemical capacitors. Highly stable cationic PANi nanofibers, synthesized from the rapid aqueous phase polymerization of aniline, are assembled with carboxylic add functionalized MWNT Into LbL films. The pH-dependent surface charge of PANi nanofibers and MWNTs allows the system to behave like weak polyelectrolytes with controllable LbL film thickness and morphology by varying the number of bilayers. The LbL-PANi/MWNT films consist of a nanoscale interpenetrating network structure with well developed nanopores that yield excellent electrochemical performance for energy storage applications. These LbL-PANi/MWNT films in lithium cell can store high volumetric capacitance (similar to 238 +/- 32 F/cm(3)) and high volumetric capacity (similar to 210 mAh/cm(3)). In addition, rate-dependent galvanostatic tests show LbL-PANi/MWNT films can deliver both high power and high energy density (similar to 220 Wh/L-electrode at similar to 100 kW/L-electrode) and could be promising positive electrode materials for thin film microbatteries or electrochemical capacitors.
引用
收藏
页码:8552 / 8561
页数:10
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