Reliability study of organic complementary logic inverters using constant voltage stress

被引：3

作者：

Wrachie, N. ^{[1
]}

Cester, A. ^{[1
]}

Lago, N. ^{[1
]}

Rizzo, A. ^{[1
]}

D'Alpaos, R. ^{[2
]}

Stefani, A. ^{[2
]}

Turatti, G. ^{[2
]}

Muccini, M. ^{[2
,3
]}

Meneghesso, G. ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] ETC Srl, I-40129 Bologna, Italy

[3] CNR ISMN Bologna, I-40129 Bologna, Italy

来源：

SOLID-STATE ELECTRONICS | 2015年 / 113卷

关键词：

Organic Thin-Film Transistors; Reliability; Bias stress; Logic inverter; THIN-FILM TRANSISTORS; SEMICONDUCTORS; TRANSPORT; MOBILITY; EXPOSURE; TFTS;

D O I：

10.1016/j.sse.2015.05.028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We performed constant voltage stresses with different bias conditions on all-organic complementary inverters. We found a 20% maximum variation of DC inverter parameters after a 10(4)-s stress. However, the largest stress-induced degradation was found in the delay times, which increased by a factor as high as 7. This is mainly due to the threshold voltage variation of the p-type thin-film-transistor and the mobility reduction of the n-type thin-film transistors, which both decrease the saturation drain current. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：151 / 156

页数：6

共 25 条

[1] Effects of Constant Voltage Stress on Organic Complementary Logic Inverters
Wrachien, N.
Cester, A.
Lago, N.
Meneghesso, G.
D'Alpaos, R.
Stefani, A.
Turatti, G.
Muccini, M.
PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014), 2014, : 298 - 301
[2] Solution processed low-voltage organic transistors and complementary inverters
Ball, James M.
Woebkenberg, Paul H.
Colleaux, Florian
Heeney, Martin
Anthony, John E.
McCulloch, Iain
Bradley, Donal D. C.
Anthopoulos, Thomas D.
APPLIED PHYSICS LETTERS, 2009, 95 (10)
[3] Effects of Positive and Negative Constant Voltage Stress on Organic TFTs
Wrachien, N.
Cester, A.
Bari, D.
Meneghesso, G.
Kovac, Jaroslav
Jakabovic, Jan
Weis, Martin
Donoval, Daniel
2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013,
[4] Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic Complementary Inverters
Chow, Melissa J.
Sun, Bin
He, Yinghui
Payne, Marcia M.
Anthony, John E.
Li, Yuning
Levine, Peter M.
Wong, William S.
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (11) : 1438 - 1441
[5] Low-voltage polymer monolayer transistors for high-gain unipolar and complementary logic inverters
Cheng, Miao
Zhang, Yanqin
Zheng, Lei
Zhang, Jianwei
Xie, Yifan
Jin, Qingqing
Tian, Yue
Wang, Jinyao
Xiao, Hongmei
Dou, Chunmeng
Yang, Zhenzhong
Li, Mengmeng
Li, Ling
Liu, Ming
JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (26) : 9562 - 9570
[6] High-Performance Organic Complementary Inverters Using Monolayer Graphene Electrodes
Jeong, Yong Jin
Jang, Jaeyoung
Nam, Sooji
Kim, Kyunghun
Kim, Lae Ho
Park, Seonuk
An, Tae Kyu
Park, Chan Eon
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (09) : 6816 - 6824
[7] Vertically stacked hybrid organic-inorganic complementary inverters with low operating voltage on flexible substrates
Kim, J. B.
Fuentes-Hernandez, C.
Hwang, D. K.
Potscavage, W. J., Jr.
Cheun, H.
Kippelen, B.
ORGANIC ELECTRONICS, 2011, 12 (01) : 45 - 50
[8] Low-voltage organic transistors and inverters using HfOx dielectrics
Oh, Jeong-Do
Kim, Jang-Woon
Kim, Dae-Kyu
Choi, Jong-Ho
ORGANIC ELECTRONICS, 2016, 30 : 131 - 135
[9] Complementary logic-in-memory inverters integrating n-channel and p-channel ferroelectric organic transistors
Wei, Haitian
Lin, Yijie
Yan, Zhenxiang
Xie, Wenfa
Wang, Wei
APPLIED PHYSICS LETTERS, 2025, 126 (08)
[10] Validity of constant voltage stress based reliability assessment of high-k devices
Lee, BH
Choi, R
Sim, JH
Krishnan, SA
Peterson, JJ
Brown, GA
Bersuker, G
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (01) : 20 - 25

← 1 2 3 →