Applications of germanium to low temperature micro-machining

被引:7
作者
Li, B [1 ]
Xiong, B [1 ]
Jiang, LN [1 ]
Zohar, Y [1 ]
Wong, M [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Mech Engn, Hong Kong, Peoples R China
来源
MEMS '99: TWELFTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 1999年
关键词
D O I
10.1109/MEMSYS.1999.746902
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Though germanium (Ge) shares similar physical properties with silicon (Si), it also possesses unique characteristics that are complementary to those of Si. The advantages of Ge include its compatibility with Si micro-fabrication, its excellent gas and liquid phase etch selectivity to other materials commonly used in Si micro-machining, and particularly its low deposition temperature (<350 degrees C) which allows Ge to be used after the completion of a standard CMOS run. Clearly, wider applications of Ge as structural, sacrificial, and sensor material require a more systematic investigation of its processing and properties. In this report, the results of a systematic investigation of the use of Ge in MEMS are presented.
引用
收藏
页码:638 / +
页数:4
相关论文
共 10 条
[1]  
JIANG L, IN PRESS MEASUREMENT
[2]   Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001) [J].
Kamins, TI ;
Briggs, GAD ;
Williams, RS .
APPLIED PHYSICS LETTERS, 1998, 73 (13) :1862-1864
[3]   In situ Raman monitoring of ultrathin Ge films [J].
Kanakaraju, S ;
Sood, AK ;
Mohan, S .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) :5756-5760
[4]   Germanium thin film formation by low-pressure chemical vapor deposition [J].
Meng, ZG ;
Jin, ZH ;
Gururaj, BA ;
Chu, P ;
Kwok, HS ;
Wong, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (04) :1423-1429
[5]  
MENG ZG, 1997, J MATER RES, V12, P1958
[6]   RAPID THERMAL CHEMICAL VAPOR-DEPOSITION OF GERMANIUM ON SILICON AND SILICON DIOXIDE AND NEW APPLICATIONS OF GE IN ULSI TECHNOLOGIES [J].
OZTURK, MC ;
GRIDER, DT ;
WORTMAN, JJ ;
LITTLEJOHN, MA ;
ZHONG, Y ;
BATCHELOR, D ;
RUSSELL, P .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (10) :1129-1134
[7]   Stiction in surface micromachining [J].
Tas, N ;
Sonnenberg, T ;
Jansen, H ;
Legtenberg, R ;
Elwenspoek, M .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (04) :385-397
[8]   EFFECTS OF GE ON MATERIAL AND ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SI1-XGEX FOR THIN-FILM TRANSISTORS [J].
TSAI, JA ;
TANG, AJ ;
NOGUCHI, T ;
REIF, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (09) :3220-3225
[9]   SATPOLY - A SELF-ALIGNED TUNGSTEN ON POLYSILICON PROCESS FOR CMOS VLSI APPLICATIONS [J].
WONG, M ;
SARASWAT, KC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (07) :1355-1361
[10]   Residual-stress relaxation in polysilicon thin films by high-temperature rapid thermal annealing [J].
Zhang, X ;
Zhang, TY ;
Wong, M ;
Zohar, Y .
SENSORS AND ACTUATORS A-PHYSICAL, 1998, 64 (01) :109-115