Quantitative analysis of Si1-xGex alloy films by SIMS and XPS depth profiling using a reference material

被引：10

作者：

Oh, Won Jin ^{[1
,2
]}

Jang, Jong Shik ^{[1
]}

Lee, Youn Seoung ^{[2
]}

Kim, Ansoon ^{[1
]}

Kim, Kyung Joong ^{[1
]}

机构：

[1] KRISS, Div Ind Metrol, 267 Gajeong Ro, Daejeon, South Korea

[2] Hanbat Natl Univ, Informat & Commun Engn, 125 Dongseodae Ro, Daejeon, South Korea

来源：

APPLIED SURFACE SCIENCE | 2018年 / 432卷

关键词：

Quantitative analysis; Si1-xGex alloy; SIMS; XPS; Depth profiling; SURFACE-ANALYSIS; AES;

D O I：

10.1016/j.apsusc.2017.08.136

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Quantitative analysis methods of multi-element alloy films were compared. The atomic fractions of Si1-xGex alloy films were measured by depth profiling analysis with secondary ion mass spectrometry (SIMS) and X-ray Photoelectron Spectroscopy (XPS). Intensity-to-composition conversion factor (ICF) was used as a mean to convert the intensities to compositions instead of the relative sensitivity factors. The ICFs were determined from a reference Si1-xGex alloy film by the conventional method, average intensity (AI) method and total number counting (TNC) method. In the case of SIMS, although the atomic fractions measured by oxygen ion beams were not quantitative due to severe matrix effect, the results by cesium ion beam were very quantitative. The quantitative analysis results by SIMS using MCs2+ ions are comparable to the results by XPS. In the case of XPS, the measurement uncertainty was highly improved by the AI method and TNC method. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：72 / 77

页数：6

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