Effect of annealing on photoluminescence property of nano particle composite ZnO films

被引：1
作者：
Mandal, S. [1 ]
Mallik, H. [1 ]
Dhar, A. [1 ]
Ray, S. K. [1 ]
机构：
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
来源：
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年
关键词：
photoluminescence; thin films; II-VI semiconductor;
D O I：
10.1109/IWPSD.2007.4472656
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of annealing temperature on the structural as well as photoluminescence (PL) properties of the nanocrystalline ZnO films deposited by sol-gel process has been investigated. The as-deposited film is amorphous in nature, and the crystallinity as well as grain sizes have been found to increase on post-deposition annealing. PL intensity is greatly improved with the increase in annealing temperature, and the hand gap of ZnO films is red-shifted. A correlation between the structural and optical properties has been investigated in detail.
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收藏
页码：859 / 861
页数：3
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