A wideband CMOS variable gain amplifier with a novel linear-in-dB gain control structure

被引：10

作者：

Li, Zhiqun ^{[1
]}

Guo, Feng ^{[1
]}

Chen, Dongdong ^{[1
]}

Li, Haisong ^{[1
]}

Wang, Higong ^{[1
]}

机构：

[1] SE Univ, Inst RF &OE ICs, Nanjing 210096, Peoples R China

来源：

2007 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: ENABLING TECHNOLOGIES FOR EMERGING WIRELESS SYSTEMS | 2007年

关键词：

VGA; wideband; linear-in-dB; CMOS;

D O I：

10.1109/RFIT.2007.4443984

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a novel structure of linear-in-dB gain control is introduced. Based on this structure, a wideband variable gain amplifier has been designed and implemented in TSMC 0.18-mu m RF CMOS process. On-chip measured results show a good linear-in-dB gain control characteristic with 12.8 dB dynamic gain range of -3.3 similar to 9.5 dB. It can operate in the frequency range of 4302330 MHz and consumes 16.2 mW at 1.8 V supply. The noise figure is 6.2 dB at maximum gain and the input P-1dB at minimum gain is -9 dBm.

引用

页码：337 / 340

页数：4