Quasimetallic behavior of carrier-polarized C60 molecular layers:: Experiment and theory -: art. no. 155440

被引:17
作者
Lu, ZH
Lo, CC
Huang, CJ
Yuan, YY
Dharma-wardana, MWC
Zgierski, MZ
机构
[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
[2] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1103/PhysRevB.72.155440
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Although C-60 is an insulator with a band gap E-g of similar to 2.5 eV, we show experimentally and theoretically that E-g is strongly affected by image forces and injected charges. In sharp contrast to the Coulomb blockade typical of quantum dots, E-g is reduced by Coulomb effects. The conductance of a micron-sized C-60 film sandwiched between metal (Al, Ag, Au, Mg, and Pt) contacts is investigated. Excellent Ohmic conductance holds for C-60 layers at room temperature, on using Al/LiF bilayer contacts. Arrhenius type activated conductivity with an activation gap of similar to 0.16 eV is found.
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页数:7
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