Size-dependent lattice parameters of microstructure-controlled Sn nanowires
被引:5
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作者:
Shin, Ho Sun
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Shin, Ho Sun
[3
]
Yu, Jin
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Yu, Jin
[3
]
Song, Jae Yong
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Korea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Univ Sci & Technol, Taejon 305333, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Song, Jae Yong
[1
,2
]
Park, Hyun Min
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Korea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Univ Sci & Technol, Taejon 305333, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Park, Hyun Min
[1
,2
]
机构:
[1] Korea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
[2] Univ Sci & Technol, Taejon 305333, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
The size dependence of the lattice parameter of nanosolids has extensively been studied because lattice strain engineering is important in controlling the physical properties of nanowires ( NWs), such as band gap, carrier transport, mechanical strength, etc. We have investigated the size-dependent lattice behavior of microstructure-controlled Sn NWs with radii of 7-35 nm. The NW microstructures were controlled as single-crystal, granular, and bamboo structures in the longitudinal direction. Results showed that the a-axis lattice parameter in the [100]-longitudinal direction of NWs can be controlled within 1% by varying the wire microstructure for the same wire radius because it is strongly dependent on the microstructure and the wire radius. Moreover, as the randomness of the grain orientation in the microstructure-controlled NWs increases, by which the anisotropy of surface stress is effectively reduced, the lattice strain of the NW can be compressive or tensile as a function of the wire radius. The longitudinal lattice parameters of microstructure-controlled Sn NWs can be tailored by reducing the effective anisotropy of surface stresses under a dimension confinement in the nanometer scale.
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Shin, Ho Sun
Yu, Jin
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Yu, Jin
Song, Jae Yong
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Korea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Song, Jae Yong
Park, Hyun Min
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Korea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
Park, Hyun Min
Kim, Yong-Sung
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Korea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South KoreaKorea Res Inst Stand & Sci, Div Ind Metrol, Taejon 305340, South Korea
机构:
Korea Adv Inst Sci & Technol, Ctr Elect Packaging Mat, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea
Shin, Ho Sun
Yu, Jin
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Korea Adv Inst Sci & Technol, Ctr Elect Packaging Mat, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea
Yu, Jin
Song, Jae Yong
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Korea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South KoreaKorea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea
Song, Jae Yong
Park, Hyun Min
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Korea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South KoreaKorea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea
机构:
Carl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, Germany
Oehl, Nikolas
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Knipper, Martin
Parisi, Juergen
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Carl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, Germany
Parisi, Juergen
Plaggenborg, Thorsten
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Carl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, Germany
机构:Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
Xu, Shao Hui
Fei, Guang Tao
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Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R ChinaChinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
Fei, Guang Tao
Zhang, Yao
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机构:Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
Zhang, Yao
Li, Xin Feng
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机构:Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
Li, Xin Feng
Jin, Zhen
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机构:Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
Jin, Zhen
Zhang, Li De
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机构:Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei Inst Phys Sci, Hefei 230031, Peoples R China
机构:
Carl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, Germany
Oehl, Nikolas
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Michalowski, Peter
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Knipper, Martin
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Kolny-Olesiak, Joanna
Plaggenborg, Thorsten
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Carl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, Germany
Plaggenborg, Thorsten
Parisi, Juergen
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Carl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Inst Phys, Energy & Semicond Res Lab, D-26129 Oldenburg, Germany
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Vizoso, Daniel
Kosmidou, Maria
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Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Kosmidou, Maria
Balk, T. John
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Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Balk, T. John
Hattar, Khalid
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Sandia Natl Labs, Ctr Integrated Nanotechnol, POB 5800, Albuquerque, NM 87185 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Hattar, Khalid
Deo, Chaitanya
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Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Deo, Chaitanya
Dingreville, Remi
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Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Sandia Natl Labs, Ctr Integrated Nanotechnol, POB 5800, Albuquerque, NM 87185 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA