Abrupt model interface for the 4H(1000)SiC-SiO2 interface

被引：24

作者：

Devynck, F ^{[1
]}

Giustino, F

Pasquarello, A

机构：

[1] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland

[2] IRRMA, CH-1015 Lausanne, Switzerland

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

SiC-SiO2; interface; abrupt interface model;

D O I：

10.1016/j.mee.2005.04.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through the sequential use of classical molecular dynamics and first-principles relaxation methods, we generate an abrupt model interface for the 4H(0001)SiC-SiO2 interface showing regular structural parameters without any coordination defect. The bond density reduction at the interface is achieved through the use of two interfacial structural units which connect the disordered oxide to the abrupt crystalline substrate. The present model demonstrates that the sole topological constraints at SiC substrates do not preclude the occurrence of oxides of similar quality as compared to those found on Si substrates.

引用

页码：38 / 41

页数：4

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