Titanium oxide thin films stoichiometric composition dependence on the oxygen flow at magnetron sputtering

被引:8
作者
Bulyarskiy, Sergey, V [1 ]
Koiva, Daria A. [1 ]
Belov, Vladislav S. [1 ,2 ]
Zenova, Elena, V [1 ]
Gusarov, Georgy G. [1 ]
机构
[1] Russian Acad Sci INME RAS, Inst Nanotechnol Microelect, Leninskiy Prospect 32A, Moscow 119334, Russia
[2] Natl Res Univ Elect Technol MIET, Moscow 124498, Russia
关键词
Thin films; Titanium oxide; Stoichiometry; Synthesis thermodynamics; Oxygen activity; Titanium activity; ELECTRICAL-PROPERTIES; VACANCY; TIO2; DIOXIDE; SURFACE;
D O I
10.1016/j.tsf.2021.138991
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The aim of this work is to study the effect of the partial pressure of oxygen in the magnetron sputtering chamber on the stoichiometric composition of titanium oxide films synthesized by this method. Titanium oxide films were synthesized at a partial oxygen pressure from 44 to 68 mPa. An increase in the partial pressure of oxygen in the chamber led to a decrease in the titanium / oxygen ratio from 0.91 to 0.51 and an increase in the resistivity from 4 to 70,000 omega cm. The authors developed a thermodynamic model that allows us to predict the stoichiometric composition of films depending on the conditions of their deposition. This theoretical model describes the experimental results well. It allows one to estimate the stoichiometric composition of the film when the discharge parameters (high-frequency power) and the partial pressure of oxygen in the reactor are known, which can be set by the gas flow. The change in the resistivity of thin films is associated with the probability of the occurrence of hopping conduction over the electronic states of an oxygen vacancy.
引用
收藏
页数:6
相关论文
共 28 条
[1]  
Abraham F.F., 1974, HOMOGENEOUS NUCL THE
[2]   Electric field-controlled crossover effect in oxygen-deficient titanium-oxide memory bits [J].
Alagoz, H. S. ;
Davies, M. ;
Zhong, Y. ;
Chow, K. H. ;
Jung, J. .
SOLID STATE COMMUNICATIONS, 2019, 303
[3]   Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors [J].
Albertin, K. F. ;
Pereyra, I. .
THIN SOLID FILMS, 2009, 517 (16) :4548-4554
[4]  
Chen X, 2007, CHEM REV, V107, P2891, DOI [10.14233/ajchem.2023.27287, 10.1021/cr0500535]
[5]   Photoluminescence properties of TiO2 nanofibers [J].
Chetibi, Loubna ;
Busko, Tetiana ;
Kulish, Nikolay Polikarpovich ;
Hamana, Djamel ;
Chaieb, Sahraoui ;
Achour, Slimane .
JOURNAL OF NANOPARTICLE RESEARCH, 2017, 19 (04)
[6]   The surface science of titanium dioxide [J].
Diebold, U .
SURFACE SCIENCE REPORTS, 2003, 48 (5-8) :53-229
[7]   Scaling the MOSFET gate dielectric: From high-k to higher-k? [J].
Frank, Martin M. ;
Kim, SangBum ;
Brown, Stephen L. ;
Bruley, John ;
Copel, Matthew ;
Hopstaken, Marco ;
Chudzik, Michael ;
Narayanan, Vijay .
MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1603-1608
[8]   Synthesis of high dielectric constant titanium oxide thin films by metalorganic decomposition [J].
Fukuda, H ;
Maeda, S ;
Salam, KMA ;
Nomura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B) :6912-6915
[9]   Influence of oxygen vacancy on the response properties of TiO2 ultraviolet detectors [J].
Gu, Peng ;
Zhu, Xinghua ;
Wu, Haihua ;
Li, Jitao ;
Yang, Dingyu .
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 779 :821-830
[10]   Preparation of rutile and anatase phases titanium oxide film by RF sputtering [J].
Huang, Hong-Hsin ;
Huang, Chia-Chen ;
Huang, Ping-Chih ;
Yang, Cheng-Fu ;
Hsu, Ching-Yun .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (05) :2659-2664