Characterization of leakage behaviors of high-k gate stacks by Electron-Beam-Induced Current

被引：2

作者：

Chen, J. ^{[1
]}

Sekiguchi, T. ^{[1
]}

Fukata, N. ^{[1
]}

Takase, M. ^{[1
]}

Chikyow, T. ^{[1
]}

Yamabe, K. ^{[2
]}

Hasumuma, R. ^{[2
]}

Sato, M. ^{[3
]}

Nara, Y. ^{[3
]}

Yamada, K. ^{[4
]}

机构：

[1] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Tsukuba, Ibaraki, Japan

[3] Semiconductor Leading Edge Technol Inc, Ibaraki, Japan

[4] Waseda Univ, Ibaraki, Japan

来源：

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年

关键词：

high-k dielectrics; leakage; EBIC; SILICON; DIELECTRICS; TRANSISTORS; TECHNOLOGY; VOLTAGE;

D O I：

10.1109/RELPHY.2008.4558949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has found that in non-stressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. The transport mechanisms of electron and holes in non-stressed high-k MOS capacitors were clarified. After stressing, positive charged traps are induced in nMOS and enhance electron conduction.

引用

页码：584 / +

页数：2

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