Structural and electrical properties of Schottky barriers on n-GaN

被引：23

作者：

Kalinina, EV ^{[1
]}

Kuznetsov, NI ^{[1
]}

Babanin, AI ^{[1
]}

Dmitriev, VA ^{[1
]}

Shchukarev, AV ^{[1
]}

机构：

[1] MEKHANOBR ANALYT CO,ST PETERSBURG 199026,RUSSIA

来源：

关键词：

GaN; Schottky barrier; effective Richardson coefficient; Interface;

D O I：

10.1016/S0925-9635(97)00115-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cr, Au and Ni Schottky barriers were formed on n-GaN. Fundamental parameters of the barriers (barrier height, electron affinity of GaN, and effective Richardson coefficient) were calculated from results of current-voltage and capacitance-voltage measurements. Interface chemistry of Cr, Au and Ni barriers on n-GaN was studied using Auger electron spectroscopy (AES) and angle-resolved X-ray photoelectron spectroscopy (AR XPS). A correlation between the chemical reactivity of metals and the value of the effective Richardson coefficient was established. (C) 1997 Elsevier Science S.A.

引用

页码：1528 / 1531

页数：4

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