A 0.7-dB NF,+8.2-dBm IIP3 CMOS low noise amplifier using frequency selective feedback

被引:3
作者
Jin, Tae Hwan [1 ]
Han, Hong Gul [1 ]
Kim, Tae Wook [1 ]
机构
[1] Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 120749, South Korea
基金
新加坡国家研究基金会;
关键词
low noise amplifier; third-order input intercept point; harmonic feedback; frequency selective feedback; linearity; RESISTIVE-FEEDBACK; RF AMPLIFIER; LNA; DISTORTION; LINEARIZATION; OPTIMIZATION; DESIGN;
D O I
10.1002/cta.2059
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A CMOS amplifier employing the frequency selective feedback technique using a shunt feedback capacitor is designed and measured. The proposed amplifier can achieve a high IIP3 (input referred third-order intercept point) by reducing the third-and second-order nonlinearity contributions to the IMD3 (third-order intermodulation distortion), which is accomplished using a capacitor as the frequency selective element. Also, the shunt feedback capacitor improves the noise performance of the amplifier. By applying the technique to a cascode LNA using 0.18-mu m CMOS technology, we obtain the NF of 0.7 dB, an IIP3 of +8.2 dBm, and a gain of 15.1 dB at 14.4mW of power consumption at 900MHz. Copyright (C) 2015 John Wiley & Sons, Ltd.
引用
收藏
页码:21 / 37
页数:17
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