Polar and semipolar (11(2)over-bar2) InAlN layers grown on AlN templates using MOVPE

被引：4

作者：

Dinh, Duc V. ^{[1
]}

Li, Haoning ^{[1
,2
]}

Parbrook, Peter J. ^{[1
,2
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[2] Natl Univ Ireland Univ Coll Cork, Sch Engn, Cork, Ireland

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 01期

基金：

欧盟第七框架计划; 爱尔兰科学基金会;

关键词：

indium aluminum nitride; morphology; MOVPE; semipolar; LOCALIZATION; SAPPHIRE;

D O I：

10.1002/pssb.201552264

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on metalorganic vapor phase epitaxial growth of InAlN layers on (0001) and (11 (2) over bar2) AlN templates at different temperatures (725-800 degrees C). The indium content (8.0-15.2%) of the (11 (2) over bar2) InAlN layers was found to be lower compared to that for the (0001) layers (9.0-23.0%). The higher indium content of the (0001) layers was attributed to a high density of small hillocks and a larger degree of relaxation. The small hillocks on the (0001) layer surface acted as quantum-dot-like structures that caused a stronger emission at longer wavelength compared to weaker emission at shorter wavelength from a "bulk" layer underneath. A large Stokes-shift of about 300 and 480 meVwas observed for the (0001) and (1122) layers, respectively. The larger shift of the (11 (2) over bar2) layers was attributed to a higher degree of localization. The larger degree of localization and higher unintentional oxygen incorporation enhanced the luminescence intensity of the (11 (2) over bar 22) layers compared to that for the (0001) layers. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：99 / 104

页数：6

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