Single-Event Upset (SEU) Results of Embedded Error Detect and Correct Enabled Block Random Access Memory (Block RAM) Within the Xilinx XQR5VFX130

被引：21

作者：

Allen, Gregory R. ^{[1
]}

Edmonds, Larry ^{[1
]}

Tseng, Chen Wei ^{[2
]}

Swift, Gary ^{[2
]}

Carmichael, Carl ^{[2
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Xilinx Inc, San Jose, CA 95124 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

关键词：

Error detect and correct; field programmable gate arrays (FPGA); single-event effects (SEV); upset mitigation; MITIGATION;

D O I：

10.1109/TNS.2010.2085447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent heavy ion measurements of the single-event upset (SEU) cross section for 65 nm embedded block random access memory (Block RAM) are presented. Results of initial investigation into the on-chip Error Detection and Correction (EDAC) are also discussed.

引用

收藏

页码：3426 / 3431

页数：6

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