Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

被引：6

作者：

Kwan, D. C. M. ^{[1
]}

Kesaria, M. ^{[1
]}

Anyebe, E. A. ^{[2
]}

Alshahrani, D. O. ^{[1
]}

Delmas, M. ^{[1
,4
]}

Liang, B. L. ^{[3
]}

Huffaker, D. L. ^{[1
,4
,5
]}

机构：

[1] Cardiff Univ, Sch Phys & Astron, Parade, Cardiff CF24 3AA, Wales

[2] Cardiff Univ, Sch Engn, Parade, Cardiff CF24 3AA, Wales

[3] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA

[4] IRnova AB, Elect 236-C5, SE-16440 Kista, Sweden

[5] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 20期

关键词：

DETECTORS; INTERFACE; PHOTOLUMINESCENCE; SUBSTRATE; EMISSION; GROWTH; MODE; NBN;

D O I：

10.1063/5.0045703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a 10 mu m InAs/GaSb type-II superlattice (T2SL) grown by molecular beam epitaxy on a GaAs substrate using an interfacial misfit (IMF) array and investigate the optical and structural properties in comparison with a T2SL grown on a GaSb substrate. The reference T2SL on GaSb is of high structural quality as evidenced in the high-resolution x-ray diffraction (HRXRD) measurement. The full width at half maximum (FWHM) of the HRXRD peak of the T2SL on GaAs is 5 times larger than that on GaSb. The long-wave infrared (LWIR) emission spectra were analyzed, and the observed transitions were in good agreement with the calculated emission energies. The photoluminescence (PL) intensity maxima (I-max) of similar to 10 mu m at 77K is significantly reduced by a factor of 8.5 on the GaAs substrate. The peak fitting analysis of the PL profile indicates the formation of sub-monolayer features at the interfaces. PL mapping highlights the non-uniformity of the T2SL on GaAs which corroborates with Nomarski imaging, suggesting an increase in defect density. Published under an exclusive license by AIP Publishing.

引用

页数：7

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