Spatial control of InGaN luminescence by MOCVD selective epitaxy

被引：26

作者：

Kapolnek, D

Keller, S

Underwood, RD

DenBaars, SP

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

D O I：

10.1016/S0022-0248(98)00176-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Selective epitaxial growth of InGaN alloys was performed by metalorganic chemical vapor deposition (MOCVD). Templates consisted of arrays of circular etched holes in a SiO2 mask layer, with pre-grown GaN hexagonal pyramid structures. The room temperature (300 K) photoluminescence (PL) peak wavelength increased with increasing mask-opening spacing for a constant mask-opening diameter. For 5 mu m diameter pyramids, peak PL wavelengths ranged from 457 to 505 nm for mask opening spacings of 6 to 13 mu m, compared to PL peak wavelength of 420 nm for a planar reference sample. (C) 1998 Elsevier Science B.V. All rights reserved.

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页码：83 / 86

页数：4

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