Detailed Study on the Role of Nature and Distribution of Pinholes and Oxide Layer on the Performance of Tunnel Oxide Passivated Contact (TOPCon) Solar Cell

被引:11
作者
Sadhukhan, Sourav [1 ]
Acharya, Shiladitya [1 ]
Panda, Tamalika [1 ]
Mandal, Nabin Chandra [1 ]
Bose, Sukanta [1 ]
Nandi, Anupam [1 ]
Das, Gourab [1 ]
Chakraborty, Susanta [2 ]
Maity, Santanu [1 ]
Chaudhuri, Partha [1 ]
Saha, Hiranmay [1 ]
机构
[1] DST IIEST Solar PV Hub, Sch Adv Mat Green Energy & Sensor Syst, Howrah 711103, India
[2] IIEST Shibpur, Dept Comp Sci & Technol CST, Howrah 711103, India
关键词
Photovoltaic cells; Pins; Silicon; Doping; Tunneling; Resistance; Computational modeling; Passivating contact; pinhole density; pinhole nature; pinhole size; poly-Si; tunnel oxide; tunnel oxide passivated contact (TOPCon) solar cell; tunneling; UNIFIED MOBILITY MODEL; DEVICE SIMULATION; SILICON;
D O I
10.1109/TED.2022.3196327
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Industrial silicon solar cells are now mostly based on aluminum back surface field (Al-BSF) or passivated emitter rear cell (PERC) technologies on p-type crystalline silicon wafers. Recently tunnel oxide passivated contact (TOPCon) solar cell on p-type Si wafers has attracted attention due to its demonstrated higher efficiency than either Al-BSF or PERC type solar cell. Numerical analysis using 3-D Sentaurus Technology Computer Aided Design (3-D-TCAD) software leads to the enhancement of the efficiency of the p- and n-type TOPCon solar cells by optimizing the size, nature, and number density of pinholes in the oxide layer; thickness of the oxide layer with and without pinholes and B doping concentration in the hole selective p+ poly-Si layer at the rear. Effects of both types of pinholes, either completely through (physical contact) or partially through (localized thinner oxide), are studied on cell performance. Simulation results show that pinholes in tunnel oxide have an advantage in lowering of series resistance and improvement of fill factor. To achieve optimum performance, the size, nature, and number density of pinholes and thickness of the oxide layer should be optimized. Considering both types of pinholes, the efficiency achieved is 25.3% for p-TOPCon and 26% for n-TOPCon. Also, the outputs of simulated p-TOPCon are compared with simulated p-PERC solar cell. The analysis shows that TOPCon solar cell on p-type wafer has significant ability to be adopted for industrial production.
引用
收藏
页码:5618 / 5623
页数:6
相关论文
共 43 条
[31]   A strong-oxidizing mixed acid derived high-quality silicon oxide tunneling layer for polysilicon passivated contact silicon solar cell [J].
Tong, Hui ;
Liao, Mingdun ;
Zhang, Zhi ;
Wan, Yimao ;
Wang, Dan ;
Quan, Cheng ;
Cai, Liang ;
Gao, Pingqi ;
Guo, Wei ;
Lin, Hao ;
Shou, Chunhui ;
Zeng, Yuheng ;
Yan, Baojie ;
Ye, Jichun .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 188 :149-155
[32]   Improvement of Passivation Quality by Post-Crystallization Treatments with Different Methods for High Quality Tunnel Oxide Passivated Contact c-Si Solar Cells [J].
Zhang, Zhi ;
Zeng, Yuheng ;
Huang, Yuqing ;
Guo, Xueqi ;
Wang, Zhixue ;
Yang, Qing ;
Shou, Chunhui ;
Yan, Baojie ;
Ye, Jichun .
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2019, :2215-2218
[33]   Investigation of the Ag-Si Contact Characteristics of Boron Emitters for n-Tunnel Oxide-Passivated Contact Solar Cells Metallized by Laser-Assisted Current Injection Treatment [J].
Fan, Yuan ;
Zou, Shuai ;
Zeng, Yulian ;
Dai, Longfei ;
Wang, Zipeng ;
Lu, Zheng ;
Sun, Hua ;
Zhou, Xinshan ;
Liao, Baochen ;
Su, Xiaodong .
SOLAR RRL, 2024, 8 (13)
[34]   Carrier Selective Tunnel Oxide Passivated Contact Enabling 21.4% Efficient Large-area N-type Silicon Solar Cells [J].
Tao, Yuguo ;
Upadhyaya, Vijaykumar ;
Huang, Ying-Yuan ;
Chen, Chia-Wei ;
Jones, Keenan ;
Rohatgi, Ajeet .
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, :2531-2535
[35]   Laser Ablation and Ni/Cu Plating Approach for Tunnel Oxide Passivated Contacts Solar Cells with Variate Polysilicon Layer Thickness: Gains and Possibilities in Comparison to Screen Printing [J].
Arya, Varun ;
Steinhauser, Bernd ;
Gruebel, Benjamin ;
Schmiga, Christian ;
Bay, Norbert ;
Brunner, Damian ;
Passig, Michael ;
Brand, Andreas A. ;
Kluska, Sven ;
Nekarda, Jan .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (24)
[36]   Optimizing phosphorus-doped polysilicon in TOPCon structures using silicon oxide layers to improve silicon solar cell performance [J].
Wan, Wangchao ;
Shi, Jindou ;
Liang, Yixi ;
Zhang, Chen ;
Da, Zheyuan ;
Wang, Junnan ;
Yao, Qing ;
Xu, Youlong ;
Wang, Minqiang .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2024, 276
[37]   24.4% industrial tunnel oxide passivated contact solar cells with ozone-gas oxidation Nano SiOx and tube PECVD prepared in-situ doped polysilicon [J].
Liu, Zunke ;
Lin, Na ;
Zhang, Qingshan ;
Yang, Bin ;
Xie, Lihua ;
Chen, Yan ;
Li, Wangpeng ;
Liao, Mingdun ;
Chen, Hui ;
Liu, Wei ;
Wang, Yuming ;
Huang, Shihua ;
Yan, Baojie ;
Zeng, Yuheng ;
Wan, Yimao ;
Ye, Jichun .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2022, 243
[38]   24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in-situ doped polysilicon [J].
Ma, S. ;
Liao, B. ;
Qiao, F. Y. ;
Ding, D. ;
Gao, C. ;
Li, Z. P. ;
Tong, R. ;
Kong, X. Y. ;
Shen, W. Z. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2023, 257
[39]   Improved Perovskite Solar Cell Performance by High Growth Rate Spatial Atomic Layer Deposited Titanium Oxide Compact Layer [J].
Hsu, Chia-Hsun ;
Chen, Ka-Te ;
Liang, Lu-Sheng ;
Gao, Peng ;
Ou, Sin-Liang ;
Wu, Wan-Yu ;
Huang, Pao-Hsun ;
Lien, Shui-Yang .
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 :49-56
[40]   Combined Fabrication and Performance Evaluation of TOPCon Back-Contact Solar Cells with Lateral Power Metal-Oxide-Semiconductor Field-Effect Transistors on a Single Substrate [J].
van Nijen, David A. ;
Stevens, Tristan ;
Mercimek, Yavuzhan ;
Yang, Guangtao ;
van Swaaij, Rene A. C. M. M. ;
Zeman, Miro ;
Isabella, Olindo ;
Manganiello, Patrizio .
SOLAR RRL, 2024, 8 (09)