Selective-area growth and magnetic characterization of lateral MnAs nanowires

被引：4

作者：

Kato, Hiroaki ^{[1
]}

Sakita, Shinya ^{[1
]}

Hara, Shinjiro ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 060862S, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 414卷

基金：

日本学术振兴会;

关键词：

Nanostructures; Metal-organic vapor phase epitaxy; Magnetic materials; Semiconducting III-V materials; DOMAIN-WALL MOTION; SHIFT REGISTER;

D O I：

10.1016/j.jcrysgro.2014.09.020

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The authors report on the bottom-up fabrication and magnetic characterization of lateral MnAs nanowires (NWs) on partially SiO2-masked GaAs (1 1 1) B substrates by selective-area metal-organic vapor phase epitaxy (SA-MOVPE). Magnetic force microscopy reveals that multimagnetic domains are formed in the relatively long MnAs NWs with the length of 5 mu m or longer in the direction parallel to the NWs. In the relatively wide NWs with the width of about 0.6 mu m, multimagnetic domains are formed in the direction perpendicular to the MnAs NWs as well as in the direction parallel to the NWs. Multimagnetic domains change to a single magnetic domain with increasing the applied magnetic fields from 1000 to 2000 G. The magnetic domains are controllable by means of the NW shape and the applied magnetic fields in our NWs fabricated by SA-MOVPE. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：151 / 155

页数：5

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