Kinetic study of thermally induced electronic and morphological transitions of a wafer-bonded GaAs/GaAs interface

被引：6

作者：

Shi, FF ^{[1
]}

Hsieh, KC ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 04期

关键词：

D O I：

10.1063/1.1592293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based upon temporal measurements of interface electrical conductivity from current-voltage characterization and interface micromorphologies from transmission electron microcopy, a kinetic analysis of the thermally induced interfacial transformation process of GaAs/GaAs semiconductor interfaces fabricated by wafer bonding technology is performed. The activation energy required for the overall interface transformation that involves defect and atomic diffusion was determined to be 0.75 eV. A physical model of this transformation process is proposed. (C) 2003 American Institute of Physics.

引用

页码：2423 / 2425

页数：3

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