Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy

被引：24

作者：

Kohashi, Yoshinori ^{[1
]}

Sato, Takuya ^{[1
,2
]}

Ikejiri, Keitaro ^{[1
,2
]}

Tomioka, Katsuhiro ^{[2
,3
]}

Hara, Shinjiroh ^{[1
,2
]}

Motohisa, Junichi ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

[2] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[3] Japan Sci & Technol Agcy, JST PREST, Kawaguchi, Saitama 3320012, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 338卷 / 01期

关键词：

Nanostructures; Metal-organic vapor phase epitaxy; Selective epitaxy; Semiconducting III-V materials; Semiconducting ternary compounds; CATALYST-FREE GROWTH; GAAS NANOWIRES; SURFACE; MOVPE; DENSITY; SILICON;

D O I：

10.1016/j.jcrysgro.2011.10.041

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium-rich InGaAs nanowires were grown on an InP (111)B substrate by catalyst-free selective-area metal-organic vapor phase epitaxy, and the growth-temperature dependence of growth rate and composition was studied. In particular, nanowire growth rate rapidly decreases as growth temperature increases. This tendency is opposite (for a similar temperature range) to that found in a previous study on selective-area growth of gallium-rich InGaAs nanowires. This difference between indium-rich and gallium-rich nanowires suggests that the influence of growth temperature on the growth of InGaAs nanowires is dependent on the group-III supply ratio. On the basis of previous experimental observations in InAs and GaAs nanowires, temperature dependence of nanowire growth rate and its dependence on group-III supply ratio are predicted. A guideline to determine the optimum growth conditions of InGaAs nanowires is also discussed. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：47 / 51

页数：5

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