Growth of TlInGaAs on InP by gas-source molecular beam epitaxy

被引：9
作者：
Takenaka, K
Asahi, H
Koh, H
Asami, K
Gonda, S
Oe, K
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] NTT, Opt Elect Labs, Kanagawa 2430124, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期
关键词：
TlInGaAs; gas-source MBE; long-wavelength optical device; temperature-insensitive wavelength laser diode; X-ray diffraction; photoluminescence;
D O I：
10.1143/JJAP.38.1026
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
TlInGaAs quaternary layers are grown on InP substrates bg gas-source molecular beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensitive wavelength laser diodes. During the growth, RHEED (reflection high-energy electron diffraction) patterns show(2 x 2) reconstructions. Successful growth of TlInGaAs is confirmed with X-ray diffraction measurements. PL emission is observed and the temperature variation of PL peak energy is as small as 0.1 meV/K.
引用
收藏
页码：1026 / 1028
页数：3
相关论文
共 11 条
[1]  
Asahi H., 1996, Compound Semiconductor, V2, P34
[2]   New III-V compound semiconductors TlInGaP for 0.9 mu m to over 10 mu m wavelength range laser diodes and their first successful growth [J].
Asahi, H ;
Yamamoto, K ;
Iwata, K ;
Gonda, S ;
Oe, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (7B) :L876-L879
[3]   New semiconductors TlInGaP and their gas source MBE growth [J].
Asahi, H ;
Fushida, M ;
Yamamoto, K ;
Iwata, K ;
Koh, H ;
Asami, K ;
Gonda, S ;
Oe, K .
JOURNAL OF CRYSTAL GROWTH, 1997, 175 :1195-1199
[4]  
ASAHI H, 1997, P 9 INT C IND PHOSPH, P448
[5]   ROOM-TEMPERATURE CW OPERATION AT 2.2-MU-M OF GAINASSB/ALGAASSB DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHOI, HK ;
EGLASH, SJ .
APPLIED PHYSICS LETTERS, 1991, 59 (10) :1165-1166
[6]   QUANTUM CASCADE LASER [J].
FAIST, J ;
CAPASSO, F ;
SIVCO, DL ;
SIRTORI, C ;
HUTCHINSON, AL ;
CHO, AY .
SCIENCE, 1994, 264 (5158) :553-556
[7]   TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy [J].
Fushida, M ;
Asahi, H ;
Yamamoto, K ;
Koh, H ;
Asami, K ;
Gonda, S ;
Oe, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (6A) :L665-L667
[8]   Photoconductance measurement on TlInGaP grown by gas source MBE [J].
Koh, H ;
Asahi, H ;
Fushida, M ;
Yamamoto, K ;
Takenaka, K ;
Asami, K ;
Gonda, S ;
Oe, K .
JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) :107-112
[9]  
TEIT Z, 1991, APPL PHYS LETT, V58, P343
[10]   INTIP - A PROPOSED INFRARED DETECTOR MATERIAL [J].
VANSCHILFGAARDE, M ;
CHEN, AB ;
KRISHNAMURTHY, S ;
SHER, A .
APPLIED PHYSICS LETTERS, 1994, 65 (21) :2714-2716
12