Optical lattices of InGaN quantum well excitons

被引：25

作者：

Chaldyshev, V. V. ^{[1
]}

Bolshakov, A. S. ^{[1
]}

Zavarin, E. E. ^{[1
]}

Sakharov, A. V. ^{[1
]}

Lundin, W. V. ^{[1
]}

Tsatsulnikov, A. F. ^{[1
]}

Yagovkina, M. A. ^{[1
]}

Kim, Taek ^{[2
]}

Park, Youngsoo ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Samsung Adv Inst Technol, Suwon, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

关键词：

BRAGG STRUCTURES;

D O I：

10.1063/1.3670499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate optical Bragg lattices formed by quasi-two-dimensional excitons in periodic systems of the InGaN quantum wells separated by the GaN barriers. When the Bragg resonance and exciton-polariton resonance are tuned to each-other, the medium exhibits an exciton-mediated resonantly enhanced optical Bragg reflection. The enhancement factor appeared to be larger than 2 for the system of 60 quantum wells. Owing to a high binding energy and oscillator strength of the excitons in InGaN quantum wells, the resonant enhancement was achieved at room temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3670499]

引用

页数：4

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