Optical lattices of InGaN quantum well excitons

被引：25

作者：

Chaldyshev, V. V. ^{[1
]}

Bolshakov, A. S. ^{[1
]}

Zavarin, E. E. ^{[1
]}

Sakharov, A. V. ^{[1
]}

Lundin, W. V. ^{[1
]}

Tsatsulnikov, A. F. ^{[1
]}

Yagovkina, M. A. ^{[1
]}

Kim, Taek ^{[2
]}

Park, Youngsoo ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Samsung Adv Inst Technol, Suwon, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

关键词：

BRAGG STRUCTURES;

D O I：

10.1063/1.3670499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate optical Bragg lattices formed by quasi-two-dimensional excitons in periodic systems of the InGaN quantum wells separated by the GaN barriers. When the Bragg resonance and exciton-polariton resonance are tuned to each-other, the medium exhibits an exciton-mediated resonantly enhanced optical Bragg reflection. The enhancement factor appeared to be larger than 2 for the system of 60 quantum wells. Owing to a high binding energy and oscillator strength of the excitons in InGaN quantum wells, the resonant enhancement was achieved at room temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3670499]

引用

页数：4

共 50 条

[1] Optical lattices of excitons in InGaN/GaN quantum well systems
V. V. Chaldyshev
A. S. Bolshakov
E. E. Zavarin
A. V. Sakharov
V. V. Lundin
A. F. Tsatsulnikov
M. A. Yagovkina
Semiconductors, 2015, 49 : 4 - 8
[2] Optical lattices of excitons in InGaN/GaN quantum well systems
Chaldyshev, V. V.
Bolshakov, A. S.
Zavarin, E. E.
Sakharov, A. V.
Lundin, V. V.
Tsatsulnikov, A. F.
Yagovkina, M. A.
SEMICONDUCTORS, 2015, 49 (01) : 4 - 8
[3] Optical lattices achieved by excitons in periodic quantum well structures
Hübner, M
Prineas, JP
Ell, C
Brick, P
Lee, ES
Khitrova, G
Gibbs, HM
Koch, SW
PHYSICAL REVIEW LETTERS, 1999, 83 (14) : 2841 - 2844
[4] Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction
Chichibui, SF
Setoguchi, A
Azuhata, T
Müllhäuser, J
Sugiyama, M
Mizutani, T
Deguchi, T
Nakanishi, H
Sota, T
Brandt, O
Ploog, KH
Mukai, T
Nakamura, S
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 180 (01): : 321 - 325
[5] Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction
Chichibu, S.F.
Setoguchi, A.
Azuhata, T.
Müllhäuser, J.
Sugiyama, M.
Mizutani, T.
Deguchi, T.
Nakanishi, H.
Sota, T.
Brandt, O.
Ploog, K.H.
Mukai, T.
Nakamura, S.
Physica Status Solidi (A) Applied Research, 2000, 180 (01): : 321 - 325
[6] Effects of nonradiative centers on localized excitons in InGaN quantum well structures
Gotoh, H.
Akasaka, T.
Tawara, T.
Kobayashi, Y.
Makimoto, T.
Nakano, H.
APPLIED PHYSICS LETTERS, 2006, 89 (22)
[7] Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
Chichibu, S.F.
Azuhata, T.
Sota, T.
Mukai, T.
Nakamura, S.
1600, American Inst of Physics, Woodbury, NY, USA (88):
[8] Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
Chichibu, SF
Azuhata, T
Sota, T
Mukai, T
Nakamura, S
JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) : 5153 - 5157
[9] Optical properties of InGaN multiple quantum well microdisks
Dai, L
Zhang, B
Zhang, Y
Wang, RP
Zhu, X
Lin, JY
Jiang, HX
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 1999, 3899 : 224 - 231
[10] Optical evaluation of pretreated InGaN quantum well structures
Böttcher, T
Bertram, F
Bergman, P
Ueta, A
Christen, J
Hommel, D
GAN AND RELATED ALLOYS - 2003, 2003, 798 : 643 - 648

← 1 2 3 4 5 →