Application of InAsSb/InAsSbP and lead chalcogenide infrared diode lasers for photoacoustic detection in the 3.2 and 5 μm region

被引:21
|
作者
Kania, P
Civis, S
机构
[1] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, CR-18223 Prague 8, Czech Republic
[2] Inst Chem Technol, Dept Analyt Chem, CR-16628 Prague 6, Czech Republic
关键词
infrared diode lasers; photoacoustic gas detection; infrared absorption;
D O I
10.1016/S1386-1425(03)00110-0
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
An investigation of photoacoustic detection using 3.2-3.6 and 5 pm diode lasers is described. An inexpensive resonant photoacoustic system was developed based, on a simple glass cell and condenser and electret microphone (Bruel & Kjaer type 4144/Sennheiser type K6P). The system was tested on the single rotation-vibration lines of C2H2, CO. COS. and NH3 gases. The best detection limits obtained are 300 ppm V for C2H2 and 20 ppm V for COS. Potential applications of infrared diode laser photoacoustic detection lie in the areas of analytical chemistry, atmospheric research, and investigation of the kinetics of reactive species. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:3063 / 3074
页数:12
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