共 29 条
- [1] Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm Semiconductors, 1998, 32 : 1019 - 1023
- [4] Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects IEE PROCEEDINGS-OPTOELECTRONICS, 1998, 145 (05): : 261 - 264
- [5] InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm Semiconductors, 1997, 31 : 831 - 834
- [7] Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 µm) due to nonlinear optical effects Semiconductors, 1999, 33 : 210 - 215