Influence of reactor neutrons irradiation on electrical, optical and structural properties of SnO2 film prepared by sol-gel method

被引:8
作者
Izerrouken, M. [1 ]
Kermadi, S. [2 ]
Souami, N. [3 ]
Sari, A. [4 ]
Boumaour, M. [2 ]
机构
[1] Ctr Rech Nucl Drana, Algiers, Algeria
[2] Unite Dev Technol Silicium, Algiers, Algeria
[3] Ctr Rech Nucl Alger, Algiers, Algeria
[4] Ctr Rech Nucl Berine, Ain Oussara, Djelfa, Algeria
关键词
Semiconductors; Radiation damage; Optical properties; Electrical properties; Reactor neutrons;
D O I
10.1016/j.nima.2009.09.003
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
SnO2 films elaborated by sol-gel method were irradiated with reactor neutron. The irradiations were made at a temperature of about 40 degrees C, with fast neutron fluences (E-n > 1.2 MeV) up to 9.6 x 10(17) n cm(-2). The induced defect has been studied by electrical, optical and structural measurements. The electrical measurements show that the resistivity rapidly increases with increasing fluences up to 3.2 x 10(17) n cm(-2) and remains constant for higher fluence (> 6.4 x 10(17) n cm(-2)). The optical measurements show a small decrease of the optical band gap with increasing fluences. From the X-ray diffraction patterns. it was found that the crystallinity and grain size are reduced. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:14 / 17
页数:4
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