Simulations of the mechanical properties of crystalline, nanocrystalline, and amorphous SiC and Si

被引:101
作者
Ivashchenko, V. I.
Turchi, P. E. A.
Shevchenko, V. I.
机构
[1] NAS Ukraine, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine
[2] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA
关键词
D O I
10.1103/PhysRevB.75.085209
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular-dynamics simulations of crystalline (c), nanocrystalline (nc), and amorphous (a) silicon carbides and silicon were carried out to investigate their vibrational and mechanical properties. The atomic configurations, vibrational spectra, and stress-strain curves were calculated at room temperature. In the case of the nanocrystalline structures, these characteristics were analyzed as functions of grain size. Young's and bulk modul and yield and flow stresses were determined from uniaxial deformation of samples under periodic boundary constraints and from experiments on rod extension. For silicon carbides, Young's modulus and flow stress decrease in the sequence "c-nc-a," and with decreasing grain size, which is attributed to a weakening of the Si-C bonds in the amorphous matrix. The enhancement of the strength properties of the homopolar nc-Si structures is attributed to their deformation anisotropy. The calculated vibrational spectra and Young's moduli are in rather good agreement with the corresponding experimental characteristics.
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页数:11
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共 51 条
[1]   COMPARATIVE-STUDY OF SILICON EMPIRICAL INTERATOMIC POTENTIALS [J].
BALAMANE, H ;
HALICIOGLU, T ;
TILLER, WA .
PHYSICAL REVIEW B, 1992, 46 (04) :2250-2279
[2]   MICROHARDNESS AND OTHER PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILMS FORMED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
BAYNE, MA ;
KUROKAWA, Z ;
OKORIE, NU ;
ROE, BD ;
JOHNSON, L ;
MOSS, RW .
THIN SOLID FILMS, 1983, 107 (02) :201-206
[3]  
BILZ H, 1979, PHONON DISPERSION RE
[4]   FULL-POTENTIAL, LINEARIZED AUGMENTED PLANE-WAVE PROGRAMS FOR CRYSTALLINE SYSTEMS [J].
BLAHA, P ;
SCHWARZ, K ;
SORANTIN, P ;
TRICKEY, SB .
COMPUTER PHYSICS COMMUNICATIONS, 1990, 59 (02) :399-415
[5]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[6]   Spatial characterization of doped SiC wafers by Raman spectroscopy [J].
Burton, JC ;
Sun, L ;
Pophristic, M ;
Lukacs, SJ ;
Long, FH ;
Feng, ZC ;
Ferguson, IT .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) :6268-6273
[7]  
CALCAGNO L, 2001, P INT C EMRS STRASB, P528
[8]  
COURTHEY TH, 1990, MECH BEHAV MAT, P59
[9]   Pressure-induced structural phase transition of paracrystalline silicon [J].
Durandurdu, M ;
Drabold, DA .
PHYSICAL REVIEW B, 2002, 66 (20) :2052041-2052046
[10]   Linear dependence of both the hardness and the elastic modulus of pulsed laser deposited a-SiC films upon their Si-C bond density [J].
ElKhakani, MA ;
Chaker, M ;
OHern, ME ;
Oliver, WC .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4310-4318