Heterostructure-barrier-varactor design

被引：46
作者：
Stake, J [1 ]
Jones, SH
Dillner, L
Hollung, S
Kollberg, EL
机构：
[1] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England
[2] Virginia Semicond Inc, Fredericksburg, VA 22401 USA
[3] Chalmers, SE-41296 Gothenburg, Sweden
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 04期
关键词：
HBV; varactor frequency tripler;
D O I：
10.1109/22.841959
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we propose a simple set of accurate frequency-domain design equations for calculation of optimum embedding impedances, optimum input power, bandwidth, and conversion efficiency of heterostructure-barrier-varactor (HBV) frequency triplers, A set of modeling equations for harmonic balance simulations of HBV multipliers are also given. A 141-GHz quasi-optical HBV tripler was designed using the method and experimental results show good agreement with the predicted results.
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收藏
页码：677 / 682
页数：6
相关论文
共 28 条
[1]  
ADAMSKI ME, 1998, 28 EUR MICR C AMST H
[2]   ANALYSIS OF VARACTOR FREQUENCY MULTIPLIERS FOR ARBITRARY CAPACITANCE VARIATION AND DRIVE LEVEL [J].
Burckhardt, CB .
BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (04) :675-+
[3]   Progress toward solid-state local oscillators at 1 THz [J].
Crowe, TW ;
Grein, TC ;
Zimmermann, R ;
Zimmermann, P .
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1996, 6 (05) :207-208
[4]   SPREADING RESISTANCE AS A FUNCTION OF FREQUENCY [J].
DICKENS, LE .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1967, MT15 (02) :101-&
[5]  
Dillner L, 1997, MICROW OPT TECHN LET, V15, P26, DOI 10.1002/(SICI)1098-2760(199705)15:1<26::AID-MOP8>3.0.CO
[6]  
2-N
[7]  
DILLNER L, 1999, 10 INT S SPAC TER TE
[8]  
DILLNER L, 1997, INT SEM DEV RES S CH
[9]   High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors [J].
Duez, V ;
Melique, X ;
Vanbesien, O ;
Mounaix, P ;
Mollot, F ;
Lippens, D .
ELECTRONICS LETTERS, 1998, 34 (19) :1860-1861
[10]  
FANO RM, 1950, J FRANKLIN I, V249
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