A novel ZVS dual bridge DC/DC converter using SiC Schottky diode

被引：0
|
作者：
Lou, JS [1 ]
Luo, M [1 ]
Chen, M [1 ]
Xu, DH [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China
来源：
IPEMC 2004: THE 4TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2004年
关键词：
three level; two transistor forward converter; zero voltage switching; silicon carbide;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A ZVS three level two transistor forward DC/DC converter (input 600V, output 48V/50A) is proposed. The performance of a 600V/10A silicon carbide (SiC) Schottky diode (Cree CDS10060) is experimentally evaluated on the prototype. Reverse recovery and overall efficiency are compared between the SiC diode and fast soft-recovery silicon power diode.
引用
收藏
页码：177 / 180
页数：4
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