Room Temperature Electrical Manipulation of Giant Magnetoresistance in Spin Valves Exchange-Biased with BiFeO3

被引：152
|
作者：
Allibe, Julie [1 ,2 ]
Fusil, Stephane [1 ,2 ,3 ]
Bouzehouane, Karim [1 ,2 ]
Daumont, Christophe [1 ,2 ]
Sando, Daniel [1 ,2 ]
Jacquet, Eric [1 ,2 ]
Deranlot, Cyrille [1 ,2 ]
Bibes, Manuel [1 ,2 ]
Barthelemy, Agnes [1 ,2 ]
机构：
[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France
[2] Univ Paris 11, F-91405 Orsay, France
[3] Univ Evry Val dEssonne, F-91025 Evry, France
来源：
NANO LETTERS | 2012年 / 12卷 / 03期
关键词：
Spintronics; multiferroic; magnetoelectric; nanodomains; BiFeO3; spin valve; FILMS;
D O I：
10.1021/nl202537y
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the giant magnetoresistance effect (GMR) of spin valves deposited on top of BiFeO3-based heterostnictures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109 degrees domain walls and propose solutions toward a reversible process.
引用
收藏
页码：1141 / 1145
页数：5
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