Room Temperature Electrical Manipulation of Giant Magnetoresistance in Spin Valves Exchange-Biased with BiFeO3

被引：152

作者：

Allibe, Julie ^{[1
,2
]}

Fusil, Stephane ^{[1
,2
,3
]}

Bouzehouane, Karim ^{[1
,2
]}

Daumont, Christophe ^{[1
,2
]}

Sando, Daniel ^{[1
,2
]}

Jacquet, Eric ^{[1
,2
]}

Deranlot, Cyrille ^{[1
,2
]}

Bibes, Manuel ^{[1
,2
]}

Barthelemy, Agnes ^{[1
,2
]}

机构：

[1] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France

[2] Univ Paris 11, F-91405 Orsay, France

[3] Univ Evry Val dEssonne, F-91025 Evry, France

来源：

NANO LETTERS | 2012年 / 12卷 / 03期

关键词：

Spintronics; multiferroic; magnetoelectric; nanodomains; BiFeO3; spin valve; FILMS;

D O I：

10.1021/nl202537y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the giant magnetoresistance effect (GMR) of spin valves deposited on top of BiFeO3-based heterostnictures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109 degrees domain walls and propose solutions toward a reversible process.

引用

页码：1141 / 1145

页数：5

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