High-performance focal plane array based on InAs-GaSb superlattices, with a 10-μm cutoff wavelength

被引：35

作者：

Delaunay, Pieffe-Yves ^{[1
]}

Nguyen, Binh Minh ^{[1
]}

Hoffman, Darin ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60611 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2008年 / 44卷 / 5-6期

关键词：

focal plane array; infrared; photodetectors; Type-II superlattice;

D O I：

10.1109/JQE.2008.916701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mu m. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterost ructure design. The R(0)A of diodes passivated with SiO2 was 23 Omega . cm(2) after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.

引用

页码：462 / 467

页数：6

共 17 条

[1] Below bandgap optical absorption in tellurium-doped GaSb [J].

Chandola, A ;

Pino, R ;

Dutta, PS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) :886-893

[2] Recent progress on LWIR and VLWIR HgCdTe focal plane arrays [J].

Chu, M ;

Terterian, S ;

Walsh, D ;

Gurgenian, HK ;

Mesropian, S ;

Rapp, RJ ;

Holley, WD .

Infrared Technology and Applications XXXI, Pts 1 and 2, 2005, 5783 :243-250

[3] 320x256 infrared Focal Plane Array based on Type II InAs/GaSb superlattice with a 12 μm cutoff wavelength [J].

Delaunay, Pierre-Yves ;

Nguyen, Binh Minh ;

Hoffman, Darin ;

Razeghi, Manijeh .

INFRARED TECHNOLOGY AND APPLICATIONS XXXIII, 2007, 6542

[4] Passivation of type-II InAs/GaSb double heterostructure [J].

Delaunay, Pierre-Yves ;

Hood, Andrew ;

Nguyen, Binh Minh ;

Hoffman, Darin ;

Wei, Yajun ;

Razeghi, Manijeh .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[5] Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation [J].

Hood, Andrew ;

Delaunay, Pierre-Yves ;

Hoffman, Darin ;

Nguyen, Binh-Minh ;

Wei, Yajun ;

Razeghi, Manijeh ;

Nathan, Vaidya .

APPLIED PHYSICS LETTERS, 2007, 90 (23)

[6] Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices [J].

Mohseni, H ;

Litvinov, VI ;

Razeghi, M .

PHYSICAL REVIEW B, 1998, 58 (23) :15378-15380

[7] Polarity inversion of type IIInAs/GaSb superlattice photodiodes [J].

Nguyen, Binh-Minh ;

Hoffman, Darin ;

Delaunay, Pierre-Yves ;

Razeghi, Manijeh ;

Nathan, Vaidya .

APPLIED PHYSICS LETTERS, 2007, 91 (10)

[8] Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm [J].

Nguyen, Binh-Minh ;

Hoffman, Darin ;

Wei, Yajun ;

Delaunay, Pierre-Yves ;

Hood, Andrew ;

Razeghi, Manijeh .

APPLIED PHYSICS LETTERS, 2007, 90 (23)

[9] High performance Type IIInAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays [J].

Razeghi, M ;

Wei, Y ;

Gin, A ;

Hood, A ;

Yazdanpanah, V .

Infrared Technology and Applications XXXI, Pts 1 and 2, 2005, 5783 :86-97

[10]

RAZEGHI M, 2006, P IEEE LEOS, V20, P43

← 1 2 →