High-performance focal plane array based on InAs-GaSb superlattices, with a 10-μm cutoff wavelength

被引：35
作者：
Delaunay, Pieffe-Yves [1 ]
Nguyen, Binh Minh [1 ]
Hoffman, Darin [1 ]
Razeghi, Manijeh [1 ]
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60611 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2008年 / 44卷 / 5-6期
关键词：
focal plane array; infrared; photodetectors; Type-II superlattice;
D O I：
10.1109/JQE.2008.916701
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mu m. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterost ructure design. The R(0)A of diodes passivated with SiO2 was 23 Omega . cm(2) after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.
引用
收藏
页码：462 / 467
页数：6
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