Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles

被引:14
作者
Al-Ta'ii, Hassan Maktuff Jaber [1 ,2 ]
Periasamy, Vengadesh [1 ]
Amin, Yusoff Mohd [3 ]
机构
[1] Univ Malaya, Dept Phys, LDMRC, Kuala Lumpur 50603, Malaysia
[2] Univ AL Muthanna, Dept Phys, Al Muthanna 66001, Iraq
[3] Univ Malaya, Fac Sci, Dept Phys, Kuala Lumpur 50603, Malaysia
来源
SENSORS | 2015年 / 15卷 / 05期
关键词
alpha particle; DNA; schottky diode; barrier height; richardson constant; series resistance; CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRICAL CHARACTERIZATION; METAL-SEMICONDUCTOR; GAMMA-IRRADIATION; SERIES RESISTANCE; INTERFACE STATES; MAGNETIC-FIELD; SI; CONTACTS; TEMPERATURE;
D O I
10.3390/s150511836
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0-20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung's and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung's methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.
引用
收藏
页码:11836 / 11853
页数:18
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