Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates

被引：0

作者：

Lee, HN ^{[1
]}

Senz, S ^{[1
]}

Pignolet, A ^{[1
]}

Hesse, D ^{[1
]}

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 10-11期

关键词：

dielectric properties; ferroelectric properties; films; perovskites; X-ray methods;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Non-c-axis-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with (116)- and (103)-orientations have been grown on Nb-doped (011)- and (111)-oriented SrTiO3 (STO) substrates by pulsed laser deposition, respectively. Analyses of the X-ray diffraction pole figures revealed that the three-dimensional epitaxy orientation relationship SBT(001)parallel to STO(001); SBT[1 (1) over bar0]parallel to STO[110] is valid for both cases of SBT thin films, irrespective of STO orientations. The measured remanent polarizations (2P(r)) of (116)-oriented and (103)-oriented SBT films were 9.6 and 10.4 muC/cm(2), respectively, for a maximum applied electric field of 320 kV/cm. The dielectric constants of (116)- and (103)-oriented SBT were estimated as 155 and 189, respectively. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1565 / 1568

页数：4

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